Jiangsu macro micro technology Co., LTD. ZhaoShan jiaqi President



"The next step to make greater development, need to be in the whole industry chain considering how to strengthen IGBT and ascension of the device IGBT level."



Compared with foreign countries, and the domestic product variety of IGBT is not perfect, especially in the chip products; High voltage (1700 V above) products or blank; High pressure 1200 V above high pressure of the area of single crystal also melt IGBT basic is blank, domestic no Field Stop technology platform. Macro micro technology with its proprietary NPT technique Field Stop the characteristICs of the technology. Domestic Trench IGBT still in development, there is no commercial products, need to be in positive Trench technology, on the back of the thinning and ion implantation process fluctuate.



Although at present the silicon is the mainstream of IGBT, SiC (SiC) and GaN (gallium nitride) is also beginning to application. SiC at present more mature device is mainly SiC diode, MOSFET also gradually to market, but IGBT application very long indeed. GaN at present the main product is also diode and LED.